Samsung has initiated the mass production of what it calls is the “most advanced DDR3 memory”. Its based on the 20nm manufacturing process, which Samsung has been using for nearly 2 years now.
This time however the 4 gigabit modules are DDR3, not DDR2 and the company utilizes its new double patterning technology with something called ArF lithography immersion. While it may sound overly scientific, Samsung is adamant this technology is going to help it a lot for its future 10nm-class DRAMs.
The 20nm DDR3 RAM consumes 25% less power compared to 25nm DDR3 modules and increases productivity by 30%. We should expect the new 4Gbit DDR3 chips to ship in the coming months.
Source : blog[dot]gsmarena[dot]com
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